High Energy Implanted Transistor Fabrication*
نویسنده
چکیده
High energy ion implantation forms, together with submicron lithography, trench technology, rapid thermal multiprocessing and simulation programs, are a powerful means of fabricating the tiny transistor structures of the future. Several crosssections of silicon devices, some of which are already known from the literature, are discussed. The benefits of implantations at energies between 200 and 2000 keV are shown.
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